Purdue University researchers have made a significant breakthrough in the emerging field of twistronics, contributing to new developments in quantum physics and material science. Their work has led to the introduction of quantum spin into twisted double bilayers of antiferromagnets, resulting in tunable moiré magnetism. This achievement has paved the way for potential advances in memory and spin-logic devices, which could have far-reaching implications for the field of physics.
The innovative research, which involved stacking van der Waals materials to explore new quantum phenomena, has been detailed in the published findings in Nature Electronics. This work is a part of a broader research avenue being pursued by the team, with implications for the fields of twistronics and spintronics.
The researchers at Purdue University have demonstrated the possibility of controlling the spin degree of freedom through the addition of quantum spin to twisted double bilayers of an antiferromagnet. Their findings suggest the potential for new spintronics materials and promising applications in memory and spin-logic devices.
Dr. Guanghui Cheng, one of the lead authors of the publication, explained that the team fabricated twisted double bilayer CrI3, which involved a twist angle between the layers. Through their work, they were able to observe moiré magnetism with rich magnetic phases and significant tunability using the electrical method.
The introduction of twisted double bilayers of the antiferromagnet CrI3 has allowed for the observation of a coexistence of ferromagnetic and antiferromagnetic orders, which is characteristic of moiré magnetism. These findings have opened up a novel avenue in the field of twistronics, offering a new class of material platform for spintronics and magnetoelectronics.
The theoretical calculations to support this experiment were performed by Dr. Pramey Upadhyaya and his team, providing strong support for the observations made by the research team.
This work is a significant milestone in the field of twistronics and spintronics, with the potential to propel advancements in spintronic applications and discover new physics. The team’s findings have broad implications, and it is expected that further research in this area will open up new possibilities for material platforms and applications in spintronics and magnetoelectronics.
The study received partial support from the US Department of Energy and the Department of Defense, among others. The researchers are optimistic about the potential impact of their work, with promising applications that could significantly advance the fields of memory and spin-logic devices, offering new avenues for exploration in the world of physics.