2023-08-09 01:50:00
SK Hynix it continues to evolve its 4D NAND memory, which is what it calls the 3D NAND memory it produces by moving the peripheral circuitry under the memory chips. That is something that all manufacturers do right now, but that is not why they have all come to call it 4D NAND. Be that as it may, now the company has announced the development of 3D NAND memory chips that include 321 memory layers for a total capacity per chip of 1Tb (128GB), which is the most advanced so far presented.
These memory chips are of the TLC type, providing 34% more bit density, which translates into more bits produced per wafer, which is how it is typically measured in the industry. These 3D NAND memory chips will be used in PCIe 5.0 solid-state drives as well as UFS 4.0 memory for high-end mobile devices.
This memory has been presented at the Flash Memory Summit that is taking place in Santa Clara (California) from August 8 to 10, 2023. There it has indicated that mass production will not begin until the first half of 2025.
Via:
WCCCFTech.
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